(Technical Parameters)
Parameter Category Specification Details
Model UR1BG3-03N (Sensor Head Only)
Measurement Principle Triangular Reflection Method
Laser Type Red semiconductor laser (Visible beam, Class 2M)
Laser Wavelength 650 nm
Measurement Range 3 ±1.5 mm (Total range of 3mm, from 1.5mm to 4.5mm from the sensor head)
Standing Distance 3 mm (Recommended working distance to target)
Spot Diameter Extremely small: Approx. 10 × 35 µm (at a 3mm standing distance) - A key feature.
Linear Output Range ±1.5 mm (around the 3mm standing distance)
Repeatability 0.1 µm (Extremely high precision)
Linearity ±0.2% of F.S. (Full Scale = 3mm range)
Light-Receiving Element CMOS image sensor
Recommended Amplifier Requires a separate amplifier like the UR-XS1A (or similar UR-series amplifier).
Outputs (via Amplifier) Dependent on the amplifier used. Typically includes analog (e.g., 4-20 mA) and digital (e.g., RS-485) outputs.
Housing Material PPS
Ingress Protection (IP Rating) IP67
Ambient Operating Temperature -10 to +55 °C (with no freezing or condensation)
Ambient Operating Humidity 35 to 85% RH
Vibration Resistance 10 to 55 Hz, Double amplitude 1.5 mm, X, Y, Z directions for 2 hours each
Shock Resistance 500 m/s² (approx. 50G), X, Y, Z directions 3 times each
Weight Approx. 18 g (Extremely lightweight)