创新无限,芯系未来
Infinite innovation, the future of chip systems
Polarity: NPN
Dissipative power: 20 W
Breakdown voltage (collector emitter): 400 V
Maximum allowable current for collector: 1.5A
Minimum current amplification factor (hFE): 5 @ 1A, 2V
Rated power (Max): 20 W
Working temperature (Max): 150 ℃
Working temperature (Min): -65 ℃
Dissipative power (Max): 2000 mW