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STP80PF55
P-channel STripFET ™ Power MOSFET, STMicroelectronics STripFET TM MOSFET, with a bandwidth breakdown voltage range, can provide ultra-low gate telephone and low on resistance. MOSFET transistor Packaging: TO-220-3
描述

Rated voltage (DC): -55.0 V
Rated current: -80.0 A
Number of channels: 1
Pin count: 3
Drain source resistance: 0.018 Ω
Polarity: P-Channel
Dissipative power: 300 W
Threshold voltage: 3 V
Drain source voltage (Vds): 55 V
Leakage source breakdown voltage: 55.0 V
Gate source breakdown voltage: ± 16.0 V
Continuous drain current (Ids): 80.0 A
Rise time: 190 ns
Input capacitance (Ciss): 5500pF @ 25V (Vds)
Rated power (Max): 300 W
Descent time: 80 ns
Working temperature (Max): 175 ℃
Working temperature (Min): -55 ℃
Dissipative power (Max): 300W (Tc)

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