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STW11NK90Z
Power Field Effect Transistor, MOSFET, N-channel, 9.2A, 900V, 0.82ohm, 10V, 3.75V Packaging: TO-247-3
描述

Pin count: 3
Drain source resistance: 0.82 Ω
Polarity: N-Channel
Dissipative power: 200 W
Threshold voltage: 3.75 V
Drain source voltage (Vds): 900 V
Continuous drain current (Ids): 9.2A
Rise time: 19 ns
Input capacitance (Ciss): 3000pF @ 25V (Vds)
Rated power (Max): 200 W
Descent time: 50 ns
Working temperature (Max): 150 ℃
Working temperature (Min): -55 ℃
Dissipative power (Max): 200W (Tc)

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