创新无限,芯系未来
Infinite innovation, the future of chip systems
Frequency: 945 MHz
Rated voltage (DC): 65.0 V
Rated current: 5 A
Polarity: N-Channel
Dissipative power: 93 W
Input capacitance: 80.0 pF
Drain source voltage (Vds): 65.0 V
Leakage source breakdown voltage: 65.0 V
Gate source breakdown voltage: ± 20.0 V
Continuous drain current (Ids): 5.00 A
Output power: 45 W
Gain: 15 dB
Test current: 250 mA
Input capacitance (Ciss): 80pF @ 28V (Vds)
Working temperature (Max): 200 ℃
Working temperature (Min): -65 ℃
Dissipative power (Max): 93000 mW
Rated voltage: 65 V