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PRODUCT POSITION:HOMEPRODUCT— STY60NM60
STY60NM60
45A, 600V ultrafast IGBT with ultrafast diode Package: -247-3
DESCRIBE

Rated voltage (DC): 600 V
Rated current: 60.0 A
Drain source resistance: 0.05 Ω
Polarity: N-Channel
Dissipative power: 560 W
Threshold voltage: 4 V
Drain source voltage (Vds): 600 V
Leakage source breakdown voltage: 600 V
Gate source breakdown voltage: ± 30.0 V
Continuous drain current (Ids): 60.0 A
Rise time: 95 ns
Input capacitance (Ciss): 7300pF @ 25V (Vds)
Rated power (Max): 560 W
Descent time: 76 ns
Working temperature (Max): 150 ℃
Working temperature (Min): -65 ℃
Dissipative power (Max): 560W (Tc)

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